KINETICS OF X-RAY LUMINESCENCE OF GAP=ZN=O

被引：0

作者：

MIKHRIN, SB ^{[1
]}

RODNYI, PA ^{[1
]}

SAMORUKOV, BE ^{[1
]}

机构：

[1] MI KALININ POLYTECH INST,LENINGRAD,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1977年 / 11卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：448 / 449

页数：2

共 13 条

[1] FREE-TO-BOUND RECOMBINATION IMPORTANT IN GAP-ZN,O AT 300 DEGREES K [J].

BACHRACH, RZ ;

JAYSON, JS .

PHYSICAL REVIEW B, 1973, 7 (06) :2540-2545

[2] TEMPERATURE-DEPENDENT RADIATIVE RECOMBINATION MECHANISMS IN GAP(ZN,O) AND GAP(CD,O) [J].

CUTHBERT, JD ;

HENRY, CH ;

DEAN, PJ .

PHYSICAL REVIEW, 1968, 170 (03) :739-+

[3]

DEMIDOV DM, 1974, ELEKTRON TEKH MATER, P34

[4] CHARACTERIZATION OF DOMINANT RECOMBINATION CENTERS IN SEMICONDUCTORS FROM TEMPERATURE DEPENDENCE OF LUMINESCENCE EXCITATION-SPECTRA - GAP(ZN,O) [J].

DISHMAN, JM .

PHYSICAL REVIEW B, 1972, 5 (06) :2258-&

[5]

GALANIN MD, 1960, T FIZ I AN SSSR, V12, P3

[6] RESPONSE-TIME MEASUREMENTS OF EXCITON AND PAIR RADIATIVE RECOMBINATION ASSOCIATED WITH ZN-O ISOELECTRONIC COMPLEX IN GAP,4 TO 100 DEGREES K [J].

JAYSON, JS ;

BACHRACH, RZ .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02) :477-&

[7]

PYSHKIN SL, 1975, SOV PHYS SEMICOND+, V8, P912

[8]

Yunovich A. E., 1972, RAD RECOMBINATION SE, P224

[9]

ZAKHAROV GM, 1974, IZV AN SSSR FIZ+, V38, P1274

[10]

ZAKHAROV GM, 1973, PRIB TEKH EKSP, P166

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