HIGH-FIELD CURRENT-VOLTAGE CHARACTERISTICS OF SEMIINSULATING GAAS

被引:6
作者
KUHNEL, G
SIEGEL, W
SCHNEIDER, HA
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 100卷 / 01期
关键词
D O I
10.1002/pssa.2211000133
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:283 / 287
页数:5
相关论文
共 15 条
  • [1] BARRAUD A, 1963, CR HEBD ACAD SCI, V256, P3632
  • [2] BONCHBRUEVICH VL, 1982, HALBLEITERPHYSIK, pCH16
  • [3] RELATION BETWEEN CR-LEVEL AND MAIN ELECTRON TRAP (EL2) IN BOAT-GROWN BULK GAAS
    HASEGAWA, F
    IWATA, N
    NANNICHI, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10): : 1479 - 1484
  • [4] CURRENT-VOLTAGE CHARACTERISTICS AND SURFACE CURRENTS IN SEMI-INSULATING GAAS(CR)
    JIMENEZLOPEZ, J
    BONNAFE, J
    FILLARD, JP
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 1150 - 1151
  • [5] CURRENT OSCILLATIONS IN SEMI-INSULATING GAAS ASSOCIATED WITH FIELD-ENHANCED CAPTURE OF ELECTRONS BY THE MAJOR DEEP DONOR EL2
    KAMINSKA, M
    PARSEY, JM
    LAGOWSKI, J
    GATOS, HC
    [J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 989 - 991
  • [6] ELECTRICAL AND PHOTOELECTRONIC PROPERTIES OF CR-DOPED SEMI-INSULATING GAAS
    KITAHARA, K
    NAKAI, K
    SHIBATOMI, A
    OHKAWA, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5339 - 5344
  • [7] KUHNEL G, IN PRESS PHYS STAT A
  • [8] LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434
  • [9] EXPERIMENTAL EVALUATION OF LOW-FREQUENCY OSCILLATIONS IN UNDOPED GAAS TO PROBE DEEP LEVEL PARAMETERS
    MARACAS, GN
    JOHNSON, DA
    GORONKIN, H
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 305 - 307
  • [10] Merinsky K., 1981, Elektrotechnicky Casopis, V32, P785