DOPING AND CRYSTALLIZATION OF AMORPHOUS SIGE FILMS WITH AN EXCIMER (KRF) LASER

被引：6

作者：

KRISHNAN, S

CHAUDHRY, MI

BABU, SV

机构：

[1] CLARKSON UNIV,CTR ADV MAT PROC,DEPT CHEM ENGN,POTSDAM,NY 13699

[2] CLARKSON UNIV,CTR ADV MAT PROC,DEPT ELECT ENGN,POTSDAM,NY 13699

来源：

JOURNAL OF MATERIALS RESEARCH | 1995年 / 10卷 / 08期

关键词：

D O I：

10.1557/JMR.1995.1884

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous silicon germanium (A-SiGe) films, deposited on silicon substrates at room temperature in a molecular beam epitaxy system, were transformed into a single-crystal film and doped with phosphorus by exposure to KrF laser pulses. Electron channeling patterns showed that laser exposure resulted in crystallization of the undoped a-SiGe films, The SiGe films were doped by laser irradiation, using a phosphorus spin-on-dopant. The sheet resistance of the doped films decreased with increasing numbers of pulses, reaching a value of-about similar to 5 x 10(4) ohms/square after 15 pulses. I-V data from mesa-type n-SiGe/p-Si diode devices were used to determine the effect of laser processing on the quality of the SiGe films.

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页码：1884 / 1888

页数：5

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