BAND-TO-BAND RECOMBINATION IN GA0.5IN0.5P

被引：18

作者：

STRAUSS, U ^{[1
]}

RUHLE, WW ^{[1
]}

QUEISSER, HJ ^{[1
]}

NAKANO, K ^{[1
]}

ISHIBASHI, A ^{[1
]}

机构：

[1] SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA,KANAGAWA 240,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 12期

关键词：

D O I：

10.1063/1.356522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The recombination kinetics of the electron-hole plasma in strongly excited, undoped Ga0.5In0.5P are investigated at 300 and 150 K by time-resolved photoluminescence measurements using line-shape analysis of transient spectra. Radiative recombination dominates, and no influence of the Auger effect is observed up to our highest carrier concentration of 1.5 X 10(19) CM-3 . Random alloy and ordered samples have the same recombination rate. The radiative recombination coefficients are found to be (1.0+/-0.3) x 10(-10) and (4+/-1) x 10(-10) cm3 s-1 at 300 and 150 K, respectively. An upper limit for the Auger coefficient is 3 X 10(-30) cm6 s-1 at 300 K.

引用

页码：8204 / 8206

页数：3

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