GAAS HEAVILY DOPED WITH BE, PREPARED BY MOLECULAR-BEAM EPITAXY

被引：0

作者：

ZHURAVLEV, KS

LUBYSHEV, DI

MIGAL, VP

PREOBRAZHENSKII, VV

STENIN, SI

TEREKHOV, SA

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来源：

INORGANIC MATERIALS | 1990年 / 26卷 / 09期

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中图分类号：

T [工业技术];

学科分类号：

08 ;

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页码：1690 / 1691

页数：2

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