INFRARED-LASER INTERFEROMETRIC THERMOMETRY - A NONINTRUSIVE TECHNIQUE FOR MEASURING SEMICONDUCTOR WAFER TEMPERATURES

被引：92

作者：

DONNELLY, VM

MCCAULLEY, JA

机构：

[1] AT&T Bell Laboratories, Murray Hill, New Jersey

[2] Current address: Robert L. Mitchell Technical Center, Hoechst Celanese Corp., Summit

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1116/1.576993

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

[No abstract available]

引用

页码：84 / 92

页数：9

共 29 条

[1] REFRACTIVE-INDEXES OF III-V COMPOUNDS - KEY PROPERTIES OF INGAASP RELEVANT TO DEVICE DESIGN [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5863-5869

[2]

ALLEN FG, 1985, SILICON MOL BEAM EPI, P3

[3] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[4] TEMPERATURE-MEASUREMENTS OF GLASS SUBSTRATES DURING PLASMA-ETCHING [J].

BOND, RA ;

DZIOBA, S ;

NAGUIB, HM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :335-338

[5]

BORN M, 1980, PRINCIPLES OPTICS, P281

[6]

CARDONA M, 1961, 1960 P INT C SEM PHY, P388

[7] ARF EXCIMER-LASER-STIMULATED GROWTH OF POLYCRYSTALLINE GAAS THIN-FILMS [J].

DONNELLY, VM ;

MCCRARY, VR ;

APPELBAUM, A ;

BRASEN, D ;

LOWE, WP .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1410-1414

[8] INTRABAND AND INTERBAND FREE-CARRIER ABSORPTION AND FUNDAMENTAL ABSORPTION EDGE IN N-TYPE INP [J].

DUMKE, WP ;

LORENZ, MR ;

PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (12) :4668-&

[9] THIN, HIGHLY DOPED LAYERS OF EPITAXIAL SILICON DEPOSITED BY LIMITED REACTION PROCESSING [J].

GRONET, CM ;

STURM, JC ;

WILLIAMS, KE ;

GIBBONS, JF ;

WILSON, SD .

APPLIED PHYSICS LETTERS, 1986, 48 (15) :1012-1014

[10]

HACMAN D, 1968, OPTIK, V28, P115

← 1 2 3 →