STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET)

被引：67

作者：

MORKOC, H ^{[1
]}

BANDY, SG ^{[1
]}

SANKARAN, R ^{[1
]}

ANTYPAS, GA ^{[1
]}

BELL, RL ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP SOLID STATE LAB,CENT RES LAB,PALO ALTO,CA 94303

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/T-ED.1978.19146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：619 / 627

页数：9

共 15 条

[1]

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[2] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].

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HENRY, CH .

PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830

[3]

GIACOLETTO LJ, UNPUBLISHED

[4]

ISHIKAWA H, 1977, ISSCC DIG TECH PAPER, P200

[5]

MORKOC H, UNPUBLISHED

[6]

SANKARAN R, UNPUBLISHED

[7]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[8]

TURNER JA, 1969, 1968 INT S GAAS

[9] NEW HETEROJUNCTION GATE GAAS FET [J].

UMEBACHI, S ;

ASAHI, K ;

INOUE, M ;

KANO, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (08) :613-614

[10] NEW HETEROJUNCTION-GATE GAAS FET [J].

UMEBACHI, S ;

ASAHI, K ;

NAGASHIMA, A ;

INOUE, M ;

KANO, G .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 :157-161

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