STABILITY AND INTERDIFFUSION AT MOCVD GROWN ZNSE/GAAS INTERFACES

被引：8

作者：

OHMI, K ^{[1
]}

SUEMUNE, I ^{[1
]}

KANDA, T ^{[1
]}

KAN, Y ^{[1
]}

YAMANISHI, M ^{[1
]}

NISHIYAMA, F ^{[1
]}

HASAI, H ^{[1
]}

机构：

[1] HIROSHIMA UNIV,FAC ENGN,DEPT APPL SCI,HIROSHIMA 724,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90760-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：467 / 470

页数：4

共 6 条

[1]

Chu W. K., 1978, BACKSCATTERING SPECT

[2]

KAMATA A, 1985, 17TH C SOL STAT DEV, P233

[3] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[4] COHERENT GROWTH OF ZNSE ON GAAS BY MOCVD [J].

MITSUHASHI, H ;

MITSUISHI, I ;

MIZUTA, M ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L578-L580

[5]

OHMI K, UNPUB

[6] CONTROL OF ZNSE FILM STOICHIOMETRY AT ZNSE GAAS INTERFACE GROWN BY MOCVD [J].

SUEMUNE, I ;

OHMI, K ;

KANDA, T ;

YUKUTAKE, K ;

KAN, Y ;

YAMANISHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (10) :L827-L829

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