SUBSTRATE-TEMPERATURE AND MONOLAYER COVERAGE EFFECTS ON EPITAXIAL ORDERING OF INAS AND INGAAS ISLANDS ON GAAS

被引：168

作者：

SOLOMON, GS

TREZZA, JA

HARRIS, JS

机构：

[1] Solid State Laboratories, Stanford University, Stanford

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.113822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For InAs Stranski-Krastanov (SK) island growth on GaAs by molecular-beam epitaxy, we show that the in-plane island diameter varies exponentially with the growth temperature over the range of 390-540°C. A transition region in SK growth between isolated island growth and island coalescing is investigated as functions of growth temperature and equivalent InAs layer-by-layer monolayer (ML) coverage in order to extend the isolated island regime for quantum confinement applications. InAs islands of 150 Å in diameter have been grown. Growth of In0.5Ga0.5As islands indicates an increased 2D epitaxial region before island nucleation and a decreased island concentration compared to growth of InAs islands.© 1995 American Institute of Physics.

引用

页码：991 / 993

页数：3