CHARACTERISTICS OF INP MIS SCHOTTKY DIODES PREPARED BY PLASMA OXIDATION

被引：7

作者：

IMAI, Y

ISHIBASHI, T

IDA, M

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 01期

关键词：

D O I：

10.1149/1.2123761

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：221 / 224

页数：4

相关论文

共 7 条

[1] INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
BARRERA, JS
ARCHER, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1023 - 1030
[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[3] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES
COWLEY, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &
[4] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &
[5] INCREASING EFFECTIVE BARRIER HEIGHT OF SCHOTTKY CONTACTS TO N-INXGA1-XAS
MORGAN, DV
FREY, J
[J]. ELECTRONICS LETTERS, 1978, 14 (23) : 737 - 738
[6] LOW LEAKAGE NEARLY IDEAL SCHOTTKY BARRIERS TO N-INP
WADA, O
MAJERFELD, A
[J]. ELECTRONICS LETTERS, 1978, 14 (05) : 125 - 126
[7] INTERFACIAL LAYER THEORY OF THE SCHOTTKY-BARRIER DIODES
WU, CY
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3786 - 3789