BASIC PRINCIPLES GOVERNING THE SURFACE ATOMIC-STRUCTURE OF ZINC BLENDE SEMICONDUCTORS

被引：8
作者：
LANNOO, M
机构：
[1] IEMN, Département ISEN (UMR CNRS 9929), 59046 Lille
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 22卷 / 01期
关键词：
D O I：
10.1016/0921-5107(93)90214-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Six general rules are extracted from the large body of experimental and theoretical data on relaxation and reconstruction at semiconductor surfaces. They are justified on the basis of a tight-binding description of chemical bonding. Their application is detailed for the (111), (110) and (100) surfaces of covalent and compound tetrahedral semiconductors.
引用
收藏
页码：1 / 8
页数：8
相关论文
共 42 条
[21]   SELF-CONSISTENT ELECTRONIC STATES FOR RECONSTRUCTED SI VACANCY MODELS [J].
LOUIE, SG ;
SCHLUTER, M ;
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 13 (04) :1654-1663
[22]   ELECTRONIC-STRUCTURE OF THE PI-BONDED CHAIN MODEL AND THE NON-BUCKLED ANTI-FERROMAGNETIC INSULATOR MODEL FOR THE SI(111) SURFACE [J].
NORTHRUP, JE ;
COHEN, ML .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :333-336
[23]   RECONSTRUCTION MECHANISM AND SURFACE-STATE DISPERSION FOR SI(111)-(2 X 1) [J].
NORTHRUP, JE ;
COHEN, ML .
PHYSICAL REVIEW LETTERS, 1982, 49 (18) :1349-1352
[24]   RECONSTRUCTION OF SEMICONDUCTOR SURFACES - BUCKLING, IONICITY, AND PI-BONDED CHAINS [J].
PANDEY, KC .
PHYSICAL REVIEW LETTERS, 1982, 49 (03) :223-226
[25]   NEW PI-BONDED CHAIN MODEL FOR SI(111)-(2BY1) SURFACE [J].
PANDEY, KC .
PHYSICAL REVIEW LETTERS, 1981, 47 (26) :1913-1917
[26]   STRUCTURE OF GAAS(001) (2X4)-C(2X8) DETERMINED BY SCANNING TUNNELING MICROSCOPY [J].
PASHLEY, MD ;
HABERERN, KW ;
FRIDAY, W ;
WOODALL, JM ;
KIRCHNER, PD .
PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2176-2179
[27]   ELECTRON COUNTING MODEL AND ITS APPLICATION TO ISLAND STRUCTURES ON MOLECULAR-BEAM EPITAXY GROWN GAAS(001) AND ZNSE(001) [J].
PASHLEY, MD .
PHYSICAL REVIEW B, 1989, 40 (15) :10481-10487
[28]   THE (001) SURFACE OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS STUDIED BY SCANNING TUNNELING MICROSCOPY [J].
PASHLEY, MD ;
HABERERN, KW ;
WOODALL, JM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1468-1471
[29]   ATOMIC, ELECTRONIC, AND VIBRONIC STRUCTURE OF SEMICONDUCTOR SURFACES [J].
POLLMANN, J ;
KALLA, R ;
KRUGER, P ;
MAZUR, A ;
WOLFGARTEN, G .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (01) :21-38
[30]   THEORY OF THE CHEMICAL-SHIFT AT RELAXED (110) SURFACES OF III-V SEMICONDUCTOR COMPOUNDS [J].
PRIESTER, C ;
ALLAN, G ;
LANNOO, M .
PHYSICAL REVIEW LETTERS, 1987, 58 (19) :1989-1991
12345