BASIC PRINCIPLES GOVERNING THE SURFACE ATOMIC-STRUCTURE OF ZINC BLENDE SEMICONDUCTORS

被引：8
作者：
LANNOO, M
机构：
[1] IEMN, Département ISEN (UMR CNRS 9929), 59046 Lille
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 22卷 / 01期
关键词：
D O I：
10.1016/0921-5107(93)90214-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Six general rules are extracted from the large body of experimental and theoretical data on relaxation and reconstruction at semiconductor surfaces. They are justified on the basis of a tight-binding description of chemical bonding. Their application is detailed for the (111), (110) and (100) surfaces of covalent and compound tetrahedral semiconductors.
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页码：1 / 8
页数：8
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