A COMPARISON OF ALANE PRECURSORS FOR GROWTH OF ALAS AND ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：6
作者：
ABERNATHY, CR [1 ]
WISK, PW [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 03期
关键词：
D O I：
10.1016/0038-1101(94)00188-L
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：737 / 738
页数：2
相关论文
共 8 条
[1]   EFFECT OF SOURCE CHEMISTRY AND GROWTH-PARAMETERS ON ALGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].
ABERNATHY, CR ;
PEARTON, SJ ;
BAIOCCHI, FA ;
AMBROSE, T ;
JORDAN, AS ;
BOHLING, DA ;
MUHR, GT .
JOURNAL OF CRYSTAL GROWTH, 1991, 110 (03) :457-471
[2]   GROWTH OF HIGH-QUALITY ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIMETHYLAMINE ALANE [J].
ABERNATHY, CR ;
JORDAN, AS ;
PEARTON, SJ ;
HOBSON, WS ;
BOHLING, DA ;
MUHR, GT .
APPLIED PHYSICS LETTERS, 1990, 56 (26) :2654-2656
[3]   COMPARISON OF TRIETHYLGALLIUM AND TRI-ISOBUTYLGALLIUM FOR GROWTH OF GAAS AND ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].
ABERNATHY, CR ;
WISK, PW ;
JONES, AC ;
RUSHWORTH, SA .
APPLIED PHYSICS LETTERS, 1992, 61 (02) :180-182
[4]   LOW-TEMPERATURE GROWTH OF ALGAAS BY MOMBE (CBE) USING TRIMETHYLAMINE ALANE [J].
ABERNATHY, CR ;
BOHLING, DA .
JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) :195-199
[5]   CHEMICAL BEAM EPITAXY OF ALGAAS AND ALINAS USING TRIMETHYLAMINE ALANE PRECURSOR [J].
BENCHIMOL, JL ;
ZHANG, XQ ;
GAO, Y ;
LEROUX, G ;
THIBIERGE, H ;
ALEXANDRE, F .
JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) :189-194
[6]  
BOHLING DA, COMMUNICATION
[7]   MOCVD OF ALGAAS/GAAS WITH NOVEL GROUP-III COMPOUNDS [J].
FRESE, V ;
REGEL, GK ;
HARDTDEGEN, H ;
BRAUERS, A ;
BALK, P ;
HOSTALEK, M ;
LOKAI, M ;
POHL, L ;
MIKLIS, A ;
WERNER, K .
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (04) :305-310
[8]   CBE GROWTH OF GAAS/GAAS, GAAS/SI AND ALGAAS/GAAS USING TEG, ASH3 AND AMINE-ALANE PRECURSORS [J].
JOYCE, TB ;
BULLOUGH, TJ ;
KIGHTLEY, P ;
KIELY, CJ ;
XING, YR ;
GOODHEW, PJ .
JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) :206-211
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