A COMPARISON OF ALANE PRECURSORS FOR GROWTH OF ALAS AND ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引:6
作者
ABERNATHY, CR [1 ]
WISK, PW [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1016/0038-1101(94)00188-L
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:737 / 738
页数:2
相关论文
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  • [1] EFFECT OF SOURCE CHEMISTRY AND GROWTH-PARAMETERS ON ALGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    ABERNATHY, CR
    PEARTON, SJ
    BAIOCCHI, FA
    AMBROSE, T
    JORDAN, AS
    BOHLING, DA
    MUHR, GT
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 110 (03) : 457 - 471
  • [2] GROWTH OF HIGH-QUALITY ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIMETHYLAMINE ALANE
    ABERNATHY, CR
    JORDAN, AS
    PEARTON, SJ
    HOBSON, WS
    BOHLING, DA
    MUHR, GT
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (26) : 2654 - 2656
  • [3] COMPARISON OF TRIETHYLGALLIUM AND TRI-ISOBUTYLGALLIUM FOR GROWTH OF GAAS AND ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY
    ABERNATHY, CR
    WISK, PW
    JONES, AC
    RUSHWORTH, SA
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (02) : 180 - 182
  • [4] LOW-TEMPERATURE GROWTH OF ALGAAS BY MOMBE (CBE) USING TRIMETHYLAMINE ALANE
    ABERNATHY, CR
    BOHLING, DA
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) : 195 - 199
  • [5] CHEMICAL BEAM EPITAXY OF ALGAAS AND ALINAS USING TRIMETHYLAMINE ALANE PRECURSOR
    BENCHIMOL, JL
    ZHANG, XQ
    GAO, Y
    LEROUX, G
    THIBIERGE, H
    ALEXANDRE, F
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) : 189 - 194
  • [6] BOHLING DA, COMMUNICATION
  • [7] MOCVD OF ALGAAS/GAAS WITH NOVEL GROUP-III COMPOUNDS
    FRESE, V
    REGEL, GK
    HARDTDEGEN, H
    BRAUERS, A
    BALK, P
    HOSTALEK, M
    LOKAI, M
    POHL, L
    MIKLIS, A
    WERNER, K
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (04) : 305 - 310
  • [8] CBE GROWTH OF GAAS/GAAS, GAAS/SI AND ALGAAS/GAAS USING TEG, ASH3 AND AMINE-ALANE PRECURSORS
    JOYCE, TB
    BULLOUGH, TJ
    KIGHTLEY, P
    KIELY, CJ
    XING, YR
    GOODHEW, PJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) : 206 - 211