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A COMPARISON OF ALANE PRECURSORS FOR GROWTH OF ALAS AND ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY
被引:6
作者
:
ABERNATHY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
ABERNATHY, CR
[
1
]
WISK, PW
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
WISK, PW
[
1
]
机构
:
[1]
AT&T BELL LABS,MURRAY HILL,NJ 07974
来源
:
SOLID-STATE ELECTRONICS
|
1995年
/ 38卷
/ 03期
关键词
:
D O I
:
10.1016/0038-1101(94)00188-L
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
[No abstract available]
引用
收藏
页码:737 / 738
页数:2
相关论文
共 8 条
[1]
EFFECT OF SOURCE CHEMISTRY AND GROWTH-PARAMETERS ON ALGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
ABERNATHY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
ABERNATHY, CR
PEARTON, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
PEARTON, SJ
BAIOCCHI, FA
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
BAIOCCHI, FA
AMBROSE, T
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AMBROSE, T
JORDAN, AS
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
JORDAN, AS
BOHLING, DA
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
BOHLING, DA
MUHR, GT
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
MUHR, GT
[J].
JOURNAL OF CRYSTAL GROWTH,
1991,
110
(03)
: 457
-
471
[2]
GROWTH OF HIGH-QUALITY ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIMETHYLAMINE ALANE
ABERNATHY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
ABERNATHY, CR
JORDAN, AS
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
JORDAN, AS
PEARTON, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
PEARTON, SJ
HOBSON, WS
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
HOBSON, WS
BOHLING, DA
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
BOHLING, DA
MUHR, GT
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
MUHR, GT
[J].
APPLIED PHYSICS LETTERS,
1990,
56
(26)
: 2654
-
2656
[3]
COMPARISON OF TRIETHYLGALLIUM AND TRI-ISOBUTYLGALLIUM FOR GROWTH OF GAAS AND ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY
ABERNATHY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
ABERNATHY, CR
WISK, PW
论文数:
0
引用数:
0
h-index:
0
机构:
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
WISK, PW
JONES, AC
论文数:
0
引用数:
0
h-index:
0
机构:
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
JONES, AC
RUSHWORTH, SA
论文数:
0
引用数:
0
h-index:
0
机构:
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
RUSHWORTH, SA
[J].
APPLIED PHYSICS LETTERS,
1992,
61
(02)
: 180
-
182
[4]
LOW-TEMPERATURE GROWTH OF ALGAAS BY MOMBE (CBE) USING TRIMETHYLAMINE ALANE
ABERNATHY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
ABERNATHY, CR
BOHLING, DA
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
BOHLING, DA
[J].
JOURNAL OF CRYSTAL GROWTH,
1992,
120
(1-4)
: 195
-
199
[5]
CHEMICAL BEAM EPITAXY OF ALGAAS AND ALINAS USING TRIMETHYLAMINE ALANE PRECURSOR
BENCHIMOL, JL
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications (CNET), Laboratoire de Bagneux, F-92220 Bagneux
BENCHIMOL, JL
ZHANG, XQ
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications (CNET), Laboratoire de Bagneux, F-92220 Bagneux
ZHANG, XQ
GAO, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications (CNET), Laboratoire de Bagneux, F-92220 Bagneux
GAO, Y
LEROUX, G
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications (CNET), Laboratoire de Bagneux, F-92220 Bagneux
LEROUX, G
THIBIERGE, H
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications (CNET), Laboratoire de Bagneux, F-92220 Bagneux
THIBIERGE, H
ALEXANDRE, F
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications (CNET), Laboratoire de Bagneux, F-92220 Bagneux
ALEXANDRE, F
[J].
JOURNAL OF CRYSTAL GROWTH,
1992,
120
(1-4)
: 189
-
194
[6]
BOHLING DA, COMMUNICATION
[7]
MOCVD OF ALGAAS/GAAS WITH NOVEL GROUP-III COMPOUNDS
FRESE, V
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
FRESE, V
REGEL, GK
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
REGEL, GK
HARDTDEGEN, H
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
HARDTDEGEN, H
BRAUERS, A
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
BRAUERS, A
BALK, P
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
BALK, P
HOSTALEK, M
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
HOSTALEK, M
LOKAI, M
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
LOKAI, M
POHL, L
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
POHL, L
MIKLIS, A
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
MIKLIS, A
WERNER, K
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
WERNER, K
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1990,
19
(04)
: 305
-
310
[8]
CBE GROWTH OF GAAS/GAAS, GAAS/SI AND ALGAAS/GAAS USING TEG, ASH3 AND AMINE-ALANE PRECURSORS
JOYCE, TB
论文数:
0
引用数:
0
h-index:
0
机构:
INST SEMICOND,BEIJING,PEOPLES R CHINA
INST SEMICOND,BEIJING,PEOPLES R CHINA
JOYCE, TB
BULLOUGH, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
INST SEMICOND,BEIJING,PEOPLES R CHINA
INST SEMICOND,BEIJING,PEOPLES R CHINA
BULLOUGH, TJ
KIGHTLEY, P
论文数:
0
引用数:
0
h-index:
0
机构:
INST SEMICOND,BEIJING,PEOPLES R CHINA
INST SEMICOND,BEIJING,PEOPLES R CHINA
KIGHTLEY, P
KIELY, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
INST SEMICOND,BEIJING,PEOPLES R CHINA
INST SEMICOND,BEIJING,PEOPLES R CHINA
KIELY, CJ
XING, YR
论文数:
0
引用数:
0
h-index:
0
机构:
INST SEMICOND,BEIJING,PEOPLES R CHINA
INST SEMICOND,BEIJING,PEOPLES R CHINA
XING, YR
GOODHEW, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
INST SEMICOND,BEIJING,PEOPLES R CHINA
INST SEMICOND,BEIJING,PEOPLES R CHINA
GOODHEW, PJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1992,
120
(1-4)
: 206
-
211
←
1
→
共 8 条
[1]
EFFECT OF SOURCE CHEMISTRY AND GROWTH-PARAMETERS ON ALGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
ABERNATHY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
ABERNATHY, CR
PEARTON, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
PEARTON, SJ
BAIOCCHI, FA
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
BAIOCCHI, FA
AMBROSE, T
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AMBROSE, T
JORDAN, AS
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
JORDAN, AS
BOHLING, DA
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
BOHLING, DA
MUHR, GT
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
MUHR, GT
[J].
JOURNAL OF CRYSTAL GROWTH,
1991,
110
(03)
: 457
-
471
[2]
GROWTH OF HIGH-QUALITY ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIMETHYLAMINE ALANE
ABERNATHY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
ABERNATHY, CR
JORDAN, AS
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
JORDAN, AS
PEARTON, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
PEARTON, SJ
HOBSON, WS
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
HOBSON, WS
BOHLING, DA
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
BOHLING, DA
MUHR, GT
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
MUHR, GT
[J].
APPLIED PHYSICS LETTERS,
1990,
56
(26)
: 2654
-
2656
[3]
COMPARISON OF TRIETHYLGALLIUM AND TRI-ISOBUTYLGALLIUM FOR GROWTH OF GAAS AND ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY
ABERNATHY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
ABERNATHY, CR
WISK, PW
论文数:
0
引用数:
0
h-index:
0
机构:
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
WISK, PW
JONES, AC
论文数:
0
引用数:
0
h-index:
0
机构:
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
JONES, AC
RUSHWORTH, SA
论文数:
0
引用数:
0
h-index:
0
机构:
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
EPICHEM LTD,WIRRAL L6Z 3QF,MERSEYSIDE,ENGLAND
RUSHWORTH, SA
[J].
APPLIED PHYSICS LETTERS,
1992,
61
(02)
: 180
-
182
[4]
LOW-TEMPERATURE GROWTH OF ALGAAS BY MOMBE (CBE) USING TRIMETHYLAMINE ALANE
ABERNATHY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
ABERNATHY, CR
BOHLING, DA
论文数:
0
引用数:
0
h-index:
0
机构:
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
AIR PROD & CHEM INC,ALLENTOWN,PA 18195
BOHLING, DA
[J].
JOURNAL OF CRYSTAL GROWTH,
1992,
120
(1-4)
: 195
-
199
[5]
CHEMICAL BEAM EPITAXY OF ALGAAS AND ALINAS USING TRIMETHYLAMINE ALANE PRECURSOR
BENCHIMOL, JL
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications (CNET), Laboratoire de Bagneux, F-92220 Bagneux
BENCHIMOL, JL
ZHANG, XQ
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications (CNET), Laboratoire de Bagneux, F-92220 Bagneux
ZHANG, XQ
GAO, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications (CNET), Laboratoire de Bagneux, F-92220 Bagneux
GAO, Y
LEROUX, G
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications (CNET), Laboratoire de Bagneux, F-92220 Bagneux
LEROUX, G
THIBIERGE, H
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications (CNET), Laboratoire de Bagneux, F-92220 Bagneux
THIBIERGE, H
ALEXANDRE, F
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications (CNET), Laboratoire de Bagneux, F-92220 Bagneux
ALEXANDRE, F
[J].
JOURNAL OF CRYSTAL GROWTH,
1992,
120
(1-4)
: 189
-
194
[6]
BOHLING DA, COMMUNICATION
[7]
MOCVD OF ALGAAS/GAAS WITH NOVEL GROUP-III COMPOUNDS
FRESE, V
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
FRESE, V
REGEL, GK
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
REGEL, GK
HARDTDEGEN, H
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
HARDTDEGEN, H
BRAUERS, A
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
BRAUERS, A
BALK, P
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
BALK, P
HOSTALEK, M
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
HOSTALEK, M
LOKAI, M
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
LOKAI, M
POHL, L
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
POHL, L
MIKLIS, A
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
MIKLIS, A
WERNER, K
论文数:
0
引用数:
0
h-index:
0
机构:
E MERCK AG,W-6100 DARMSTADT,GERMANY
WERNER, K
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1990,
19
(04)
: 305
-
310
[8]
CBE GROWTH OF GAAS/GAAS, GAAS/SI AND ALGAAS/GAAS USING TEG, ASH3 AND AMINE-ALANE PRECURSORS
JOYCE, TB
论文数:
0
引用数:
0
h-index:
0
机构:
INST SEMICOND,BEIJING,PEOPLES R CHINA
INST SEMICOND,BEIJING,PEOPLES R CHINA
JOYCE, TB
BULLOUGH, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
INST SEMICOND,BEIJING,PEOPLES R CHINA
INST SEMICOND,BEIJING,PEOPLES R CHINA
BULLOUGH, TJ
KIGHTLEY, P
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0
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0
h-index:
0
机构:
INST SEMICOND,BEIJING,PEOPLES R CHINA
INST SEMICOND,BEIJING,PEOPLES R CHINA
KIGHTLEY, P
KIELY, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
INST SEMICOND,BEIJING,PEOPLES R CHINA
INST SEMICOND,BEIJING,PEOPLES R CHINA
KIELY, CJ
XING, YR
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0
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0
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0
机构:
INST SEMICOND,BEIJING,PEOPLES R CHINA
INST SEMICOND,BEIJING,PEOPLES R CHINA
XING, YR
GOODHEW, PJ
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0
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0
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机构:
INST SEMICOND,BEIJING,PEOPLES R CHINA
INST SEMICOND,BEIJING,PEOPLES R CHINA
GOODHEW, PJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1992,
120
(1-4)
: 206
-
211
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