MICROWAVE CHARACTERISTICS OF A CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY

被引：4
作者：
SONG, JI
HONG, WP
PALMSTROM, CJ
HAYES, JR
CHOUGH, KB
VANDERGAAG, BP
机构：
[1] Bellcore, Red bank, NJ, 07701
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 21期
关键词：
HETEROJUNCTION BIPOLAR TRANSISTORS; CHEMICAL BEAM EPITAXIAL GROWTH;
D O I：
10.1049/el:19931260
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first high-speed operation of an InP/In0.53Ga0.47As heterojunction bipolar transistor (HBT) using a highly carbon-doped base is reported. A base carrier concentration of 7 x 10(19)/cm3 was achieved by chemical beam epitaxy (CBE). To the authors' knowledge, this is the highest doping level reported using carbon. The f(T) and f(max) of the HBT with two 1.5 x 15 mum2 emitter fingers were 115GHz and 51 GHz, respectively, at I(c) = 60mA and V(CE) = 2.0V. These results indicate the significant potential of highly carbon-doped-base InP/InGaAs HBTs for high-speed applications.
引用
收藏
页码：1893 / 1894
页数：2
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