PLASMA IMMERSION ION-IMPLANTATION DOPING USING A MICROWAVE MULTIPOLAR BUCKET PLASMA

被引：48
|
作者：
QIN, S
MCGRUER, NE
CHAN, C
WARNER, K
机构：
[1] Department of Electrical and Computer Engineering, Northeastern University, Boston, MA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 10期
关键词：
D O I：
10.1109/16.158808
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using plasma immersion ion implantation, silicon has been doped with boron in a high-voltage pulsed microwave multipolar bucket plasma system. Diborane gas (1%) diluted in helium is used as an ion source. A sheet resistance of 57-OMEGA/square and an implanted dose of 1.9 X 10(15)/cm2 are obtained in 10 min when the target potential is pulsed to -10 kV with a 1% duty cycle. The boron profile in the silicon substrate is different than that predicted for a conventional 10-keV ion implantation. Silicon p-n junctions fabricated by this technique are of good quality.
引用
收藏
页码：2354 / 2358
页数：5
相关论文
共 50 条
  • [41] Plasma immersion ion implantation of UHMWPE
    Dong, H
    Bell, T
    Blawert, C
    Mordike, BL
    JOURNAL OF MATERIALS SCIENCE LETTERS, 2000, 19 (13) : 1147 - 1149
  • [42] Plasma-immersion ion implantation
    Thomae, RW
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 139 (1-4): : 37 - 42
  • [43] Plasma immersion ion implantation of polyethylene
    Kondyurin, A
    Karmanov, V
    Guenzel, R
    VACUUM, 2001, 64 (02) : 105 - 111
  • [44] Plasma-immersion ion implantation
    Thomae, Rainer W.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1998, 139 (1-4): : 37 - 42
  • [45] Instrumentation for plasma immersion ion implantation
    López-Callejas, R
    Valencia-Alvarado, R
    Muñoz-Castro, AE
    Godoy-Cabrera, OG
    Tapia-Fabela, JL
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2002, 73 (12): : 4277 - 4282
  • [46] Plasma immersion ion implantation and deposition
    You, YZ
    Chun, HG
    Kim, DI
    Lee, JH
    Cha, BC
    Choi, BK
    Lee, JH
    Korus 2005, Proceedings, 2005, : 565 - 567
  • [47] Plasma-immersion ion implantation
    Mantese, JV
    Brown, IG
    Cheung, NW
    Collins, GA
    MRS BULLETIN, 1996, 21 (08) : 52 - 56
  • [48] THE RESPONSE OF A MICROWAVE MULTIPOLAR BUCKET PLASMA TO A HIGH-VOLTAGE PULSE
    QIN, S
    CHAN, C
    MCGRUER, NE
    BROWNING, J
    WARNER, K
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 1991, 19 (06) : 1272 - 1278
  • [49] MODEL OF PLASMA IMMERSION ION-IMPLANTATION FOR VOLTAGE PULSES WITH FINITE RISE AND FALL TIMES
    STEWART, RA
    LIEBERMAN, MA
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) : 3481 - 3487
  • [50] DOSE-TIME RELATION IN BF3 PLASMA IMMERSION ION-IMPLANTATION
    SHAO, JQ
    ROUND, M
    QIN, S
    CHAN, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (02): : 332 - 334
12345