PLASMA IMMERSION ION-IMPLANTATION DOPING USING A MICROWAVE MULTIPOLAR BUCKET PLASMA

被引：48
|
作者：
QIN, S
MCGRUER, NE
CHAN, C
WARNER, K
机构：
[1] Department of Electrical and Computer Engineering, Northeastern University, Boston, MA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 10期
关键词：
D O I：
10.1109/16.158808
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using plasma immersion ion implantation, silicon has been doped with boron in a high-voltage pulsed microwave multipolar bucket plasma system. Diborane gas (1%) diluted in helium is used as an ion source. A sheet resistance of 57-OMEGA/square and an implanted dose of 1.9 X 10(15)/cm2 are obtained in 10 min when the target potential is pulsed to -10 kV with a 1% duty cycle. The boron profile in the silicon substrate is different than that predicted for a conventional 10-keV ion implantation. Silicon p-n junctions fabricated by this technique are of good quality.
引用
收藏
页码：2354 / 2358
页数：5
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