DETECTION OF PROTON PARAMETRIC X-RAY-RADIATION IN SILICON

被引：15

作者：

AFANASENKO, VP ^{[1
]}

BARYSHEVSKY, VG ^{[1
]}

ZUEVSKY, RF ^{[1
]}

LOBKO, AS ^{[1
]}

MOSKATELNIKOV, AA ^{[1
]}

NURUSHEV, SB ^{[1
]}

PANOV, VV ^{[1
]}

POTSILUJKO, VP ^{[1
]}

RYKALIN, VV ^{[1
]}

SKOROKHOD, SV ^{[1
]}

SHVARKOV, DS ^{[1
]}

机构：

[1] HIGH ENERGY PHYS INST,PROTVINO 142284,USSR

来源：

PHYSICS LETTERS A | 1992年 / 170卷 / 04期

关键词：

D O I：

10.1016/0375-9601(92)90261-J

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Parametric X-ray radiation (PXR), caused by protons with an energy of 70 GeV in a silicon crystal, has been detected. Experimental values of the PXR quantum yield for two Bragg angles and its angular distribution have been determined and a comparison with the corresponding theoretically calculated values has been made.

引用

页码：315 / 318

页数：4

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