IONICITY DEPENDENCE OF LATTICE THERMAL-CONDUCTIVITY IN TETRAHEDRAL SEMICONDUCTORS

被引：7
作者：
GARBATO, L
RUCCI, A
机构：
[1] Istituto di Fisica dell'Università, Gruppo Nazionale di Struttura della Materia, C.N.R.
来源：
CHEMICAL PHYSICS LETTERS | 1979年 / 61卷 / 03期
关键词：
D O I：
10.1016/0009-2614(79)87168-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The lattice thermal conductivity of ANBB-N tetrahedral semiconductors is described in terms of simple parameters, including the melting point and crystal (Phillips) ionicity. Comparison of results with experimental data shows an overall accuracy of about 15%. © 1979.
引用
收藏
页码：542 / 544
页数：3
相关论文
共 26 条
[11]  
LEROUXHUGON P, 1967, J PHYS PARIS S2, V28, pC1
[12]  
LORENZ MR, 1967, PHYSICS CHEM 2 6 COM
[13]  
MOSES AJ, 1971, OPTICAL MATERIAL PRO, V1
[14]  
NGUYEN XX, 1964, CR HEBD ACAD SCI, V258, P2292
[15]  
PAMPLIN BR, 1975, HDB CHEM PHYSICS
[16]  
Parrott J. E., 1972, International Conference on Phonon Scattering in Solids, P27
[17]  
Phillips J.C., 1973, BONDS BANDS SEMICOND
[18]   IONICITY OF CHEMICAL BOND IN CRYSTALS [J].
PHILLIPS, JC .
REVIEWS OF MODERN PHYSICS, 1970, 42 (03) :317-&
[19]   SIMPLIFIED METHOD FOR CALCULATION OF CHARACTERISTIC TEMPERATURES OF DIAMOND AND SPHALERITE-STRUCTURE SOLIDS [J].
REEBER, RR ;
MCLACHLAN, D .
CANADIAN JOURNAL OF PHYSICS, 1971, 49 (17) :2287-+
[20]  
RODOT M, 1965, MATERIAUX SEMICONDUC
123