IONICITY DEPENDENCE OF LATTICE THERMAL-CONDUCTIVITY IN TETRAHEDRAL SEMICONDUCTORS

被引：7
作者：
GARBATO, L
RUCCI, A
机构：
[1] Istituto di Fisica dell'Università, Gruppo Nazionale di Struttura della Materia, C.N.R.
来源：
CHEMICAL PHYSICS LETTERS | 1979年 / 61卷 / 03期
关键词：
D O I：
10.1016/0009-2614(79)87168-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The lattice thermal conductivity of ANBB-N tetrahedral semiconductors is described in terms of simple parameters, including the melting point and crystal (Phillips) ionicity. Comparison of results with experimental data shows an overall accuracy of about 15%. © 1979.
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页码：542 / 544
页数：3
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