MOSFET DEGRADATION DUE TO HOT-CARRIER EFFECT AT HIGH-FREQUENCIES

被引：17

作者：

SUBRAHMANIAM, R

CHEN, JY

JOHNSTON, AH

机构：

[1] Microelectronics Laboratory, Boeing Aerospace and Electronics, High Technology Center, Seattle

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 01期

关键词：

D O I：

10.1109/55.46918

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports hot-carrier-induced degradation due to ac stress on short-channel MOSFET’s. It is observed that pulsed gate voltage stressing with a short fall time (0.7 ns) can cause additional lifetime degradation in the form of drain-current reduction. The ac-enhanced degradation is more pronounced at higher frequencies. © 1990 IEEE

引用

页码：21 / 23

页数：3

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