TITANIUM-SILICON SCHOTTKY BARRIER DIODES

被引：39

作者：

COWLEY, AM

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 04期

关键词：

D O I：

10.1016/0038-1101(70)90151-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：403 / +

页数：1

共 16 条

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[7] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

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[8]

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[9] SILICON SCHOTTKY BARRIER DIODE WITH NEAR-IDEAL I-V CHARACTERISTICS [J].

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