CHARGE CONTROL, DC, AND RF PERFORMANCE OF A 0.35-MU-M PSEUDOMORPHIC ALGAAS/INGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR

被引：42

作者：

NGUYEN, LD ^{[1
]}

SCHAFF, WJ ^{[1
]}

TASKER, PJ ^{[1
]}

LEPORE, AN ^{[1
]}

PALMATEER, LF ^{[1
]}

FOISY, MC ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 02期

关键词：

D O I：

10.1109/16.2432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：139 / 144

页数：6

共 25 条

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[2]

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[3]

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[4]

Camnitz L. H., 1985, Proceedings of the IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.85CH2173-3), P199

[5]

CAMNITZ LH, 1985, THESIS CORNELL U ITH

[6]

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[7]

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[8]

CHAO PC, 1983, IEEE ELECTRON DEVICE, V4

[9] PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

KOPP, W ;

FISCHER, R ;

MORKOC, H ;

THORNE, RE ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1238-1240

[10] 60 GHZ LOW-NOISE HIGH-ELECTRON-MOBILITY TRANSISTORS [J].

DUH, KHG ;

CHAO, PC ;

SMITH, PM ;

LESTER, LF ;

LEE, BR .

ELECTRONICS LETTERS, 1986, 22 (12) :647-649

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