A REAL SPACE INVESTIGATION OF THE DIMER DEFECT STRUCTURE OF SI(001)-(2X8)

被引:107
作者
NIEHUS, H [1 ]
KOHLER, UK [1 ]
COPEL, M [1 ]
DEMUTH, JE [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
JOURNAL OF MICROSCOPY-OXFORD | 1988年 / 152卷
关键词
D O I
10.1111/j.1365-2818.1988.tb01444.x
中图分类号
TH742 [显微镜];
学科分类号
摘要
引用
收藏
页码:735 / 742
页数:8
相关论文
共 13 条
[1]   ORDERED-DEFECT MODEL FOR SI(001)-(2X8) [J].
ARUGA, T ;
MURATA, Y .
PHYSICAL REVIEW B, 1986, 34 (08) :5654-5657
[2]   LOCAL ELECTRONIC-STRUCTURE AND SURFACE GEOMETRY OF AG ON SI(111) [J].
DEMUTH, JE ;
VONLENEN, EJ ;
TROMP, RM ;
HAMERS, RJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :18-26
[3]   ELECTRONIC AND GEOMETRIC STRUCTURE OF SI(111)-(7X7) AND SI(001) SURFACES [J].
HAMERS, RJ ;
TROMP, RM ;
DEMUTH, JE .
SURFACE SCIENCE, 1987, 181 (1-2) :346-355
[4]   SCANNING TUNNELING MICROSCOPY OF SI(001) [J].
HAMERS, RJ ;
TROMP, RM ;
DEMUTH, JE .
PHYSICAL REVIEW B, 1986, 34 (08) :5343-5357
[5]   SI(100)2XN STRUCTURES INDUCED BY NI CONTAMINATION [J].
KATO, K ;
IDE, T ;
MIURA, S ;
TAMURA, A ;
ICHINOKAWA, T .
SURFACE SCIENCE, 1988, 194 (1-2) :L87-L94
[6]   STRUCTURE, STABILITY, AND ORIGIN OF (2 X N) PHASES ON SI(100) [J].
MARTIN, JA ;
SAVAGE, DE ;
MORITZ, W ;
LAGALLY, MG .
PHYSICAL REVIEW LETTERS, 1986, 56 (18) :1936-1939
[7]   LOW-ENERGY ELECTRON-DIFFRACTION SYSTEM USING A POSITION-SENSITIVE DETECTOR [J].
MCRAE, EG ;
MALIC, RA ;
KAPILOW, DA .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1985, 56 (11) :2077-2083
[8]  
MULLER K, 1984, DETERMINATION SURFAC, P483
[9]   DIMER-PLUS-CHAIN STRUCTURE FOR THE SI(100)-C(4X2) SURFACE [J].
NORTHRUP, JE .
PHYSICAL REVIEW LETTERS, 1985, 54 (08) :815-818
[10]  
PANDEY KC, 1985, 17TH P INT C PHYS SE, P55