SURFACE RECOMBINATION VELOCITY IN SEMICONDUCTORS

被引:0
作者
DMITRIEV, SG
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1985年 / 19卷 / 09期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1035 / 1038
页数:4
相关论文
共 50 条
[41]   Measurement of surface recombination velocity of Si surface by photoluminescence method [J].
Nishimoto, Y. ;
Saitoh, T. ;
Hasegawa, H. .
Bulletin of the Faculty of Engineering - Hokkaido University, 1993, (164)
[42]   Determination of the surface recombination velocity of semiconductor by surface photovoltaic measurement [J].
Yan, YM .
APPLIED PHYSICS LETTERS, 1997, 71 (03) :407-409
[43]   RECOMBINATION IN SEMICONDUCTORS [J].
LANDSBERG, PT .
NATURE, 1978, 275 (5678) :270-271
[44]   RECOMBINATION IN SEMICONDUCTORS [J].
BEMSKI, G .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :990-1004
[45]   Surface recombination in doped semiconductors: Effect of light excitation power and of surface passivation [J].
Cadiz, F. ;
Paget, D. ;
Rowe, A. C. H. ;
Berkovits, V. L. ;
Ulin, V. P. ;
Arscott, S. ;
Peytavit, E. .
JOURNAL OF APPLIED PHYSICS, 2013, 114 (10)
[46]   ON THE THEORY OF SURFACE RECOMBINATION IN SEMICONDUCTORS FOR LARGE POTENTIAL DIFFERENCES BETWEEN SURFACE AND BULK [J].
BERZ, F .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (458) :275-280
[47]   APPARATUS FOR MEASURING THE RATE OF SURFACE RECOMBINATION OF SEMICONDUCTORS USING CATHODOLUMINESCENCE [J].
KORINFSKII, AD ;
MUSATOV, AL .
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1983, 26 (01) :198-202
[48]   Contactless measurement of bulk recombination lifetime and surface recombination velocity in silicon wafers [J].
Bernini, R. ;
Cutolo, A. ;
Irace, A. ;
Schettino, S. ;
Spirito, P. ;
Zeni, L. .
1995,
[49]   DETERMINATION OF SMALL DIFFUSION LENGTH IN SEMICONDUCTORS BY ELECTRON-SONDE METHOD WITH ESTIMATION OF VELOCITY EFFECT OF SURFACE RECOMBINATION AND SAMPLE SIZES [J].
SELEZNEVA, MA ;
KUPRIYANOVA, TA ;
DITSMAN, SA .
IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1974, 38 (11) :2328-2332
[50]   CONTROL OF VOLUME LIFE TIME AND THE VELOCITY OF SURFACE RECOMBINATION OF CHARGE-CARRIERS IN SEMICONDUCTORS BY INFRARED-LASER SOUNDING TECHNIQUE [J].
VORONKOV, VB ;
IVANOV, AS ;
KOMAROVSKIKH, KF ;
LETENKO, DG ;
FEDORTSOV, AB ;
CHURKIN, YV .
ZHURNAL TEKHNICHESKOI FIZIKI, 1991, 61 (02) :104-108