THIN-FILMS OF (RE)BA2CU3O7 EPITAXIALLY GROWN INSITU BY EXCIMER LASER ABLATION - STRUCTURAL AND SUPERCONDUCTING BEHAVIOR

被引:18
作者
GUILLOUXVIRY, M [1 ]
THIVET, C [1 ]
KARKUT, MG [1 ]
PADIOU, J [1 ]
PENA, O [1 ]
PERRIN, A [1 ]
SERGENT, M [1 ]
GAUNEAU, M [1 ]
机构
[1] CTR NATL ETUD TELECOMMUN LANNION B,F-22301 LANNION,FRANCE
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 18卷 / 02期
关键词
D O I
10.1016/0921-5107(93)90122-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the epitaxial growth of (RE)Ba2Cu3O7 thin films, with RE = Y, Pr, Eu, Gd, Ho, presenting good superconducting properties, except for Pr which is a semiconductor. The film deposition was carried out through a fully in-situ process, using a laser ablation technique. To give access to future applications, especially for microwave devices, the growth control, first adjusted on small samples (typically 5 mm x 5 mm), has been extended to larger substrates up to 15 mm x 15 mm; these films also exhibit highly homogeneous characteristics.
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收藏
页码:115 / 121
页数:7
相关论文
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