VARIABLE RANGE TUNNELING IN AMORPHOUS-GE

被引：0

作者：

OSMUN, JW ^{[1
]}

FRITZSCH.H ^{[1
]}

机构：

[1] UNIV CHICAGO,CHICAGO,IL 60637

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1974年 / 19卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：394 / 394

页数：1

共 50 条

[1] ELECTRICAL PROPERTIES OF AMORPHOUS-GE ALLOYS AND ELECTRON TUNNELING IN AMORPHOUS-SEMICONDUCTORS
HAUSER, JJ
PHYSICAL REVIEW B, 1974, 9 (06): : 2544 - 2557
[2] CRYSTALLIZATION OF AMORPHOUS-GE
TANAKA, K
SOLID STATE COMMUNICATIONS, 1990, 76 (02) : 213 - 215
[3] MODEL FOR DEPOSITION OF AMORPHOUS-GE
SHEVCHIK, NJ
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 61 (02): : 589 - 597
[4] AMORPHOUS-GE UNDER PRESSURE
TANAKA, K
PHYSICAL REVIEW B, 1991, 43 (05): : 4302 - 4307
[5] CONTACT RESISTANCE IN AMORPHOUS-GE
KUBELIK, I
TRISKA, A
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1975, 31 (02): : K107 - K110
[6] HYDROGEN STATES IN AMORPHOUS-GE
CHOO, FC
TONG, BY
SOLID STATE COMMUNICATIONS, 1978, 25 (06) : 385 - 387
[7] STUDIES OF MODEL COORDINATES FOR AMORPHOUS-GE
CHOO, FC
TONG, BY
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 459 - 459
[8] COMPARATIVE-STUDY OF AMORPHOUS-GE AND AMORPHOUS GAAS
THEYE, ML
GHEORGHIU, A
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03): : 325 - 330
[9] SURFACE STATES AND OXIDATION OF AMORPHOUS-GE
SPICER, WE
DONOVAN, TM
ORLOWSKI, B
BAER, AD
HELMS, CR
PERESKOK.V
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 392 - 392
[10] COMPARISON OF STRUCTURE OF AMORPHOUS-GE AND GAAS
TEMKIN, RJ
SOLID STATE COMMUNICATIONS, 1974, 15 (08) : 1325 - 1328