X-RAY CHARACTERIZATION OF STRAIN RELAXATION IN INGAAS/GAAS STRAINED-LAYER SUPERLATTICES

被引：10
|
作者：
LI, JH
MAI, ZH
CUI, SF
ZHOU, JM
FENG, W
机构：
[1] Institute of Physics, Chinese Academy of Sciences, Beijing
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 24期
关键词：
D O I：
10.1063/1.110190
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Strain relaxed InGaAs/GaAs superlattices grown on GaAs(001) substrate by molecular beam epitaxy have been studied by means of double-crystal x-ray diffractometry. Theoretical simulations of the rocking curves were successfully performed by taking into account the relaxation mechanism, the tilt between the multilayer and the substrate, and the peak broadening effects. It was found that in our sample the misfit strain is relaxed on the multilayer/substrate interface. This leads to the formation of misfit dislocations on the interface with a mean linear density about 9 x 10(4) cm-1 and a tilt of 325 s. toward the [010] direction between the multilayer and the substrate.
引用
收藏
页码：3327 / 3329
页数：3
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