MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS

被引：231

作者：

HENRY, CH

LOGAN, RA

MERRITT, FR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 06期

关键词：

D O I：

10.1063/1.328091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3042 / 3050

页数：9

共 22 条

[1] SINGLE-PASS GAIN MEASUREMENTS ON OPTICALLY PUMPED ALXGA(1-X)AS-ALYGA(1-Y)AS DOUBLE-HETEROJUNCTION LASER STRUCTURES AT ROOM-TEMPERATURE [J].

BAKKER, J ;

ACKET, GA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) :567-573

[2]

Bedd H. B., 1972, SEMICONDUCTOR SEMIME, V8

[3] LASER CONDITIONS IN SEMICONDUCTORS [J].

BERNARD, MGA ;

DURAFFOURG, G .

PHYSICA STATUS SOLIDI, 1961, 1 (07) :699-703

[4] COULOMB EFFECTS ON GAIN SPECTRUM OF SEMICONDUCTORS [J].

BRINKMAN, WF ;

LEE, PA .

PHYSICAL REVIEW LETTERS, 1973, 31 (04) :237-240

[5] PULSE ELECTROPLATING OF HIGH-RESISTANCE MATERIALS, POORLY CONTACTED DEVICES, AND EXTREMELY SMALL AREAS [J].

BURRUS, CA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :833-+

[6]

DIXON RW, 1979, IEEE J QUANTUM ELECT, V15, P460

[7]

DOW JD, 1974, 12TH P INT C PHYS SE, P957

[8]

Einstein A, 1917, PHYS Z, V18, P121

[9]

GRIBKOVSKI VP, 1969, J APPL SPECTROSC, V11, P838

[10] GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

HAKKI, BW ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1299-1306

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