ASSESSMENT OF OXYGEN IN GALLIUM-ARSENIDE BY INFRARED LOCAL VIBRATIONAL-MODE SPECTROSCOPY

被引：93

作者：

SCHNEIDER, J

DISCHLER, B

SEELEWIND, H

MOONEY, PM

LAGOWSKI, J

MATSUI, M

BEARD, DR

NEWMAN, RC

机构：

[1] MIT,CAMBRIDGE,MA 02139

[2] UNIV READING,JJ THOMSON PHYS LAB,READING RG6 2AF,BERKS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 15期

关键词：

D O I：

10.1063/1.100691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1442 / 1444

页数：3

共 20 条

[1]

AKKERMAN ZL, 1976, SOV PHYS SEMICOND+, V10, P590

[2] LOCALIZED VIBRATIONAL MODES OF INTERSTITIAL OXYGEN AND OXYGEN COMPLEXES IN GAP [J].

BARKER, AS ;

BERMAN, R ;

VERLEUR, HW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (01) :123-132

[3] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED [J].

BOSOMWORTH, DR ;

HAYES, W ;

SPRAY, ARL ;

WATKINS, GD .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) :133-+

[4] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE [J].

BROZEL, MR ;

CLEGG, JB ;

NEWMAN, RC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) :1331-1339

[5] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].

CORBETT, JW ;

WATKINS, GD ;

CHRENKO, RM ;

MCDONALD, RS .

PHYSICAL REVIEW, 1961, 121 (04) :1015-&

[6]

DEAN PJ, 1986, DEEP CTR SEMICONDUCT, P185

[7] PAIR OF LOCAL VIBRATION MODE ABSORPTION-BANDS RELATED TO EL2 DEFECTS IN SEMI-INSULATING GAAS - COMMENT [J].

DESNICA, UV ;

SKOWRONSKI, M ;

CRETELLA, MC .

APPLIED PHYSICS LETTERS, 1988, 52 (09) :760-760

[8] PROPERTIES OF SEMI-INSULATING GAAS [J].

GOOCH, CH ;

HOLEMAN, BR ;

HILSUM, C .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2069-&

[9]

KAMINSKA M, 1981, I PHYS C SER, V63, P197

[10] IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS [J].

LAGOWSKI, J ;

LIN, DG ;

AOYAMA, T ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :336-338

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