THE ELECTRICAL AND OPTICAL-PROPERTIES OF POLYCRYSTALLINE AGINTE2 THIN-FILMS

被引：5
作者：
PATEL, SM
PATEL, BH
机构：
[1] Sardar Patel Univ, Gujarat, India, Sardar Patel Univ, Gujarat, India
来源：
MATERIALS LETTERS | 1986年 / 5卷 / 1-2期
关键词：
SEMICONDUCTING FILMS - Growth - SILVER INDIUM TELLURIUM ALLOYS - Electronic Properties;
D O I：
10.1016/0167-577X(86)90086-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical and optical properties of semiconducting AgInTe//2 thin films grown on glass substrates by the flash evaporation technique at substrate temperatures ranging from 423 to 673 K are studied. It is observed that the films deposited at 573 K have minimum resistivity. The activation energies of the films grown at different substrate temperatures are determined. The influence of substrate temperature on the optical band gap of the polycrystalline films is studied. The implications are discussed.
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页码：35 / 38
页数：4
相关论文
共 15 条
[11]   ELECTRONIC-STRUCTURE OF AGINSE2 AND CUINSE2 [J].
SHAY, JL ;
TELL, B ;
KASPER, HM ;
SCHIAVONE, LM .
PHYSICAL REVIEW B, 1973, 7 (10) :4485-4490
[12]   ROOM-TEMPERATURE ELECTRICAL PROPERTIES OF 10 I-III-VI2 SEMICONDUCTORS [J].
TELL, B ;
SHAY, JL ;
KASPER, HM .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2469-&
[13]   SOME PROPERTIES OF AGAITE2, AGGATE2, AND AGINTE2 [J].
TELL, B ;
SHAY, JL ;
KASPER, HM .
PHYSICAL REVIEW B, 1974, 9 (12) :5203-5208
[14]   THE OPTICAL-PROPERTIES OF AGINTE2 THIN-FILMS [J].
VAIDHYANATHAN, R ;
PINJARE, SL ;
SOBHANADRI, J .
THIN SOLID FILMS, 1983, 105 (02) :157-162
[15]  
ZHUZE VP, 1958, SOV PHYS-TECH PHYS, V3, P1925
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