LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON

被引：7

作者：

UCHIDA, Y ^{[1
]}

YUE, J ^{[1
]}

KAMASE, F ^{[1
]}

SUZUKI, T ^{[1
]}

HATTORI, T ^{[1
]}

MATSUMURA, M ^{[1
]}

机构：

[1] MUSASHI INST TECHNOL,DEPT ELECT & ELECTR ENGN,SETAGAYA KU,TOKYO 158,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 11期

关键词：

D O I：

10.1143/JJAP.25.1633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1633 / 1639

页数：7

共 10 条

[1] SI-SIO2 INTERFACE STRUCTURES ON SI(100), (111), AND (110) SURFACES
HATTORI, T
SUZUKI, T
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 470 - 472
[2] ISHIBASHI K, 1982, APPL PHYS LETT, V45, P454
[3] LOW-TEMPERATURE OXIDATION OF SILICON IN A MICROWAVE-DISCHARGED OXYGEN PLASMA
KIMURA, SI
MURAKAMI, E
MIYAKE, K
WARABISAKO, T
SUNAMI, H
TOKUYAMA, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : 1460 - 1466
[4] APPLICATIONS OF A-SI FIELD-EFFECT TRANSISTORS IN LIQUID-CRYSTAL DISPLAYS AND IN INTEGRATED-LOGIC CIRCUITS
LECOMBER, PG
SNELL, AJ
MACKENZIE, KD
SPEAR, WE
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 423 - 432
[5] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION
LECOMBER, PG
SPEAR, WE
GHAITH, A
[J]. ELECTRONICS LETTERS, 1979, 15 (06) : 179 - 181
[6] AMORPHOUS-SILICON INTEGRATED-CIRCUIT
MATSUMURA, M
HAYAMA, H
[J]. PROCEEDINGS OF THE IEEE, 1980, 68 (10) : 1349 - 1350
[7] LOW-TEMPERATURE THERMAL-OXIDATION OF AMORPHOUS-SILICON AND ITS APPLICATION TO AMORPHOUS-SILICON MOS-TRANSISTORS
UCHIDA, Y
IKEGAMI, T
MATSUMURA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09): : L733 - L735
[8] PROPOSED PLANAR-TYPE AMORPHOUS-SILICON MOS-TRANSISTORS
UCHIDA, Y
MATSUMURA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (10): : L812 - L814
[9] YAMAMOTO Y, 1983, ELECTRON LETT, V42, P607
[10] ELECTRICAL CHARACTERISTICS OF SILICON MOS STRUCTURE FORMED BY A NOVEL LOW-TEMPERATURE THERMAL-OXIDATION METHOD
YUE, JH
UCHIDA, Y
MATSUMURA, M
[J]. ELECTRONICS LETTERS, 1986, 22 (01) : 35 - 36

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