LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON

被引：7
|
作者：
UCHIDA, Y [1 ]
YUE, J [1 ]
KAMASE, F [1 ]
SUZUKI, T [1 ]
HATTORI, T [1 ]
MATSUMURA, M [1 ]
机构：
[1] MUSASHI INST TECHNOL,DEPT ELECT & ELECTR ENGN,SETAGAYA KU,TOKYO 158,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 11期
关键词：
D O I：
10.1143/JJAP.25.1633
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1633 / 1639
页数：7
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