LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON

被引：7

作者：

UCHIDA, Y ^{[1
]}

YUE, J ^{[1
]}

KAMASE, F ^{[1
]}

SUZUKI, T ^{[1
]}

HATTORI, T ^{[1
]}

MATSUMURA, M ^{[1
]}

机构：

[1] MUSASHI INST TECHNOL,DEPT ELECT & ELECTR ENGN,SETAGAYA KU,TOKYO 158,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 11期

关键词：

D O I：

10.1143/JJAP.25.1633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1633 / 1639

页数：7

共 10 条

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[2]

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MATSUMURA, M ;

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[7] LOW-TEMPERATURE THERMAL-OXIDATION OF AMORPHOUS-SILICON AND ITS APPLICATION TO AMORPHOUS-SILICON MOS-TRANSISTORS [J].

UCHIDA, Y ;

IKEGAMI, T ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09) :L733-L735

[8] PROPOSED PLANAR-TYPE AMORPHOUS-SILICON MOS-TRANSISTORS [J].

UCHIDA, Y ;

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[9]

YAMAMOTO Y, 1983, ELECTRON LETT, V42, P607

[10] ELECTRICAL CHARACTERISTICS OF SILICON MOS STRUCTURE FORMED BY A NOVEL LOW-TEMPERATURE THERMAL-OXIDATION METHOD [J].

YUE, JH ;

UCHIDA, Y ;

MATSUMURA, M .

ELECTRONICS LETTERS, 1986, 22 (01) :35-36

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