THEORETICAL PERFORMANCE OF INAS/INXGA1-XSB SUPERLATTICE-BASED MIDWAVE INFRARED-LASERS

被引：74

作者：

GREIN, CH ^{[1
]}

YOUNG, PM ^{[1
]}

EHRENREICH, H ^{[1
]}

机构：

[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 03期

关键词：

Band structure - Calculations - Electron scattering - Energy conservation - Energy gap - Perturbation techniques - Semiconducting indium compounds - Semiconductor superlattices;

D O I：

10.1063/1.357682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that for appropriate layer widths the performance of ideal InAs/InxGa1-xSb superlattice-based midwave injection lasers can be limited by radiative rather than Auger recombination. The threshold carrier densities and lifetimes are calculated over the 77-300 K temperature range at 3.5 mum. Lifetimes are obtained from detailed calculations of band-to-band Auger and radiative recombination rates based on realistic nonparabolic band structures. This system is therefore a promising new laser candidate.

引用

页码：1940 / 1942

页数：3

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