RESISTIVITY MEASUREMENT OF SEMICONDUCTING EPITAXIAL LAYERS BY REFLECTION OF A HYPERFREQUENCY ELECTROMAGNETIC WAVE

被引：7

作者：

BICHARA, MRE

POITEVIN, JP

机构：

来源：

关键词：

D O I：

10.1109/TIM.1964.4313421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：323 / &

共 9 条

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[2]

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[3]

BENEDICT, 1953, PHYS REV, P1565

[4]

BIARD JR, 1962, J ELECTROCHEM SOC, P705

[5]

GIBSON AF, 1957, PROGRESS SEMICONDUCT, V8, P140

[6]

JACOBS H, 1962, IRE INT CONVENT RE 3, P30

[7]

MONTGOMERY, 1947, PRINCIPLES MICROWAVE, V8, pCH2

[8]

RAMSA AP, 1959, J APPL PHYS, P1054

[9] RESISTIVITY MEASUREMENTS ON GERMANIUM FOR TRANSISTORS [J].

VALDES, LB .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02) :420-427