COMPARISON OF HOT-CARRIER RELAXATION IN QUANTUM-WELLS AND BULK GAAS AT HIGH CARRIER DENSITIES

被引：88

作者：

PELOUCH, WS ^{[1
]}

ELLINGSON, RJ ^{[1
]}

POWERS, PE ^{[1
]}

TANG, CL ^{[1
]}

SZMYD, DM ^{[1
]}

NOZIK, AJ ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.45.1450

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An investigation of the hot-carrier relaxation in GaAs/(Al,Ga)As quantum wells and bulk GaAs in the high-carrier-density limit is presented. Using a time-resolved luminescence up-conversion technique with less-than-or-equal-to 80-fs temporal resolution, carrier temperatures are measured in the 100-fs-to-2-ns range. Our results show that the hot-carrier cooling rates in the quantum wells are significantly slower than in the bulk for carrier densities greater than 2 x 10(18) cm-3. A comparison is made with previous publications to resolve the confusion concerning the difference in cooling rates in quasi-two- and three-dimensional systems.

引用

页码：1450 / 1453

页数：4

共 21 条

[1] INJECTION INTERSUBBAND RELAXATION AND RECOMBINATION IN GaAs MULTIPLE QUANTUM WELLS. [J].