P-TYPE GAP AS A SEMICONDUCTING PHOTOELECTRODE

被引：57

作者：

BUTLER, MA

GINLEY, DS

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 06期

关键词：

D O I：

10.1149/1.2129870

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1273 / 1278

页数：6

共 20 条

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[5]

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[8] SURFACE STATES ON PHOSPHORUS-RICH AND GALLIUM-RICH GAP(111)P SURFACES IN ELECTRON ENERGY-LOSS SPECTROSCOPY AND PHOTOEMISSION [J].

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[9] DETERMINATION OF SOLIDUS AND GALLIUM AND PHOSPHORUS VACANCY CONCENTRATIONS IN GAP [J].

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[10]

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