ELECTRICAL TRANSPORT IN AS ION-IMPLANTED SI IN THE METAL-INSULATOR-TRANSITION RANGE

被引：0
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作者：
GANG, C
VANDERHEIJDEN, RW
DEWAELE, ATAM
GIJSMAN, HM
TIELEN, FPB
机构：
来源：
PHYSICA B | 1990年 / 165卷
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：303 / 304
页数：2
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