RECENT ADVANCES IN ULTRAHIGH-SPEED HEMT LSI TECHNOLOGY

被引：0
|
作者：
ABE, M
MIMURA, T
KOBAYASHI, N
SUZUKI, M
KOSUGI, M
NAKAYAMA, M
ODANI, K
HANYU, I
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：2021 / 2031
页数：11
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