ELECTRICAL-PROPERTIES OF SCHOTTKY-BARRIER FORMED ON AS-GROWN AND OXIDIZED SURFACE OF HOMOEPITAXIALLY GROWN DIAMOND(001) FILM

被引：63

作者：

KIYOTA, H

MATSUSHIMA, E

SATO, K

OKUSHI, H

ANDO, T

KAMO, M

SATO, Y

LIDA, M

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

[2] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN

[3] TOKAI UNIV,SCH ENGN,HIRATSUKA,KANAGAWA 25912,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 24期

关键词：

D O I：

10.1063/1.115329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Characteristics of Schottky barriers formed on homoepitaxial diamond film have been studied. Current-voltage characteristics of Al contacts on both the as-grown film and the oxidized film show rectification. On the other hand, ohmic property is observed on Au/as-grown film while Au/oxidized film shows rectification. These results imply that the mechanism of the barrier formation on the as-grown diamond is drastically changed by oxidation. The difference of electrical properties between the as-grown film and the oxidized film is also observed from capacitance-voltage characteristics. This result suggests that additional accepters which are not related to boron, exist in the as-grown film and disappear after oxidation. (C) 1995 American Institute of Physics.

引用

页码：3596 / 3598

页数：3