ELECTRICAL-PROPERTIES OF SCHOTTKY-BARRIER FORMED ON AS-GROWN AND OXIDIZED SURFACE OF HOMOEPITAXIALLY GROWN DIAMOND(001) FILM

被引：63
作者：
KIYOTA, H
MATSUSHIMA, E
SATO, K
OKUSHI, H
ANDO, T
KAMO, M
SATO, Y
LIDA, M
机构：
[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN
[2] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN
[3] TOKAI UNIV,SCH ENGN,HIRATSUKA,KANAGAWA 25912,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 24期
关键词：
D O I：
10.1063/1.115329
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Characteristics of Schottky barriers formed on homoepitaxial diamond film have been studied. Current-voltage characteristics of Al contacts on both the as-grown film and the oxidized film show rectification. On the other hand, ohmic property is observed on Au/as-grown film while Au/oxidized film shows rectification. These results imply that the mechanism of the barrier formation on the as-grown diamond is drastically changed by oxidation. The difference of electrical properties between the as-grown film and the oxidized film is also observed from capacitance-voltage characteristics. This result suggests that additional accepters which are not related to boron, exist in the as-grown film and disappear after oxidation. (C) 1995 American Institute of Physics.
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页码：3596 / 3598
页数：3
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