HIGH-POWER COD-FREE OPERATION OF 0.98-MU-M INGAAS/GAAS/INGAP LASERS WITH NONINJECTION REGIONS NEAR THE FACETS

被引：23

作者：

SAGAWA, M

HIRAMOTO, K

TOYONAKA, T

SHINODA, K

UOMI, K

机构：

[1] Hitachi Ltd, Tokyo 185, 1-280 Higashi-Koigakubo, Kokubunji

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 17期

关键词：

GALLIUM INDIUM ARSENIDE; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; SEMICONDUCTOR JUNCTION LASERS;

D O I：

10.1049/el:19940970

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors demonstrate the catastrophic-optical-damage-free high-output-power operation of 0.98 mu m InGaAs/InGaP/GaAs buried-ridge-structure lasers with non-injection regions near the facets. A maximum output power of 466mW and fundamental operation at 100mW were achieved.

引用

页码：1410 / 1411

页数：2

共 6 条

[1] HIGH-POWER OPERATION OF ALUMINUM-FREE (LAMBDA = 0.98-MU-M) PUMP LASER FOR ERBIUM-DOPED FIBER AMPLIFIER
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[2] GIGNAC WJ, 1992, ECOC, P69
[3] 0.98-1.02-MU-M STRAINED INGAAS/ALGAAS DOUBLE-QUANTUM-WELL HIGH-POWER LASERS WITH GAINP BURIED WAVE-GUIDES
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[4] HIGHLY-RELIABLE CW OPERATION OF 100 MW GAALAS BURIED TWIN RIDGE SUBSTRATE LASERS WITH NONABSORBING MIRRORS
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[5] 0.98-MU-M INGAAS-INGAASP-INGAP GRIN-SCH SL-SQW LASERS FOR COUPLING HIGH OPTICAL POWER INTO SINGLE-MODE FIBER
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) : 1932 - 1935
[6] ADVANTAGES OF INGAASP SEPARATE CONFINEMENT LAYER IN 0.98-MU-M INGAAS/GAAS/INGAP STRAINED DQW LASERS FOR HIGH-POWER OPERATION AT HIGH-TEMPERATURE
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TSUJI, S
UOMI, K
[J]. ELECTRONICS LETTERS, 1992, 28 (17) : 1639 - 1640

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