THE EFFECT OF SHALLOW DONORS AND ACCEPTORS ON ALAS/GAAS SUPERLATTICES INTERMIXING STUDIED ON ATOMIC-SCALE

被引：0

作者：

ZHENG, JF ^{[1
]}

SALMERON, M ^{[1
]}

WEBER, ER ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 93卷 / 05期

关键词：

SEMICONDUCTORS; POINT DEFECTS; SCANNING TUNNELING MICROSCOPY;

D O I：

10.1016/0038-1098(94)00810-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Dopant-induced intermixing of Al and Ga in as-grown AlAs/GaAs short period superlattices has been studied by scanning tunneling microscopy in cross-section with atomic resolution. In Si doped n-type AlAs/GaAs short period superlattices, the intermixing increases with increasing Si concentration (Si: 0-5x10(18)/cm(3)). In Be doped p-type AlAs/GaAs short period superlattices, no intermixing of Al and Ga is observed independently of the Be concentration (Be: 0-5x10(18)/cm(3)).

引用

页码：419 / 423

页数：5

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