A 0.13μm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays below 3 Ps

被引：26

作者：

Ruecker, H. ^{[1
]}

Heinemann, B. ^{[1
]}

Winkler, W. ^{[2
]}

Barth, R. ^{[1
]}

Borngraeber, J. ^{[1
]}

Drews, J. ^{[1
]}

Fischer, G. G. ^{[1
]}

Fox, A. ^{[1
]}

Grabolla, T. ^{[1
]}

Haak, U. ^{[1
]}

Knoll, D. ^{[1
]}

Korndoerfer, F. ^{[1
]}

Mai, A. ^{[1
]}

Marschmeyer, S. ^{[1
]}

Schley, P. ^{[1
]}

Schmidt, D. ^{[1
]}

Schmidt, J. ^{[1
]}

Schulz, K. ^{[1
]}

Tillack, B. ^{[1
]}

Wolansky, D. ^{[1
]}

Yamamoto, Y. ^{[1
]}

机构：

[1] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

[2] Silicon Radar, D-15236 Frankfurt, Germany

来源：

PROCEEDINGS OF THE 2009 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2009年

关键词：

Terms - Silicon bipolar/BiCMOS process technology; Heterojunction bipolar transistors; Silicon alloys; Millimeter wave bipolar integrated circuits; Millimeter wave devices;

D O I：

10.1109/BIPOL.2009.5314251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 0.13 mu m SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed Riffs (f(T)=240 GHz, f(max),=330 GHz, BVCEO=1.7 V) along with high-voltage HBTs (f(T)=50 GHz, f(max)=130 GHz, BVCEO=3.7 V) integrated in a dual-gate, triple-well RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above 200 GHz are demonstrated.

引用

页码：166 / +

页数：2

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