ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING

被引：213

作者：

DAVIES, JA

DENHARTO.J

ERIKSSON, L

MAYER, JW

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1967年 / 45卷 / 12期

关键词：

D O I：

10.1139/p67-339

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：4053 / &

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共 28 条

[1] AN EXPERIMENTAL STUDY ON ORIENTATION DEPENDENCE OF (P,GAMMA) YIELDS IN MONOCRYSTALLINE ALUMINUM
ANDERSEN, JU
DAVIES, JA
NIELSEN, KO
ANDERSEN, SL
[J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC): : 210 - &
[2] EVIDENCE FOR DAMAGE REGIONS IN SI GAAS AND INSB SEMICONDUCTORS BOMBARDED WITH HIGH-ENERGY NEUTRONS
BERTOLOTTI, M
PAPA, T
SETTE, D
VITALI, G
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (06) : 2645 - +
[3] BISHAY A, 1967, INTERACTION RADIA ED, P361
[4] EXPERIMENTAL INVESTIGATION OF ORIENTATION DEPENDENCE OF RUTHERFORD SCATTERING YIELD IN SINGLE CRYSTALS
BOGH, E
UGGERHOJ, E
[J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC): : 216 - &
[5] RUTHERFORD SCATTERING OF PROTONS IN SURFACE LAYERS OF A TUNGSTEN SINGLE CRYSTAL
BOGH, E
[J]. PHYSICAL REVIEW LETTERS, 1967, 19 (02) : 61 - &
[6] BOGH E, 1967, PRIVATE COMMUNICATIO
[7] BOGH E, 1967, INTERACTION RADIATIO, P361
[8] RANGE OF XE133 AND AR41 IONS OF KILOELECTRON VOLT ENERGIES IN ALUMINUM
DAVIES, JA
BROWN, F
MCCARGO, M
[J]. CANADIAN JOURNAL OF PHYSICS, 1963, 41 (06) : 829 - &
[9] RANGE OF ENERGETIC XE125 IONS IN MONOCRYSTALLINE SILICON
DAVIES, JA
BROWN, F
BALL, GC
DOMEIJ, B
[J]. CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) : 1070 - &
[10] DAVIES JG, IN PRESS