ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING

被引：213
作者：
DAVIES, JA
DENHARTO.J
ERIKSSON, L
MAYER, JW
机构：
来源：
CANADIAN JOURNAL OF PHYSICS | 1967年 / 45卷 / 12期
关键词：
D O I：
10.1139/p67-339
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：4053 / &
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