SHOT-NOISE SUPPRESSION IN THE SINGLE-ELECTRON TUNNELING REGIME

被引：179

作者：

BIRK, H

DEJONG, MJM

SCHONENBERGER, C

机构：

[1] Philips Research Laboratories, 5656 AA Eindhoven

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.75.1610

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electrical current fluctuations through tunnel junctions are studied with a scanning-tunneling microscope. For single-tunnel junctions classical Poisson shot noise is observed, indicative for uncorrelated tunneling of electrons. For double-barrier tunnel junctions, formed by a nanoparticle between tip and surface, the shot noise is observed to be suppressed below the Poisson value. For strongly asymmetric junctions, where a Coulomb staircase is observed in the current-voltage characteristic, the shot-noise suppression is periodic in the applied voltage. This originates from correlations in the transfer of electrons imposed by single-electron charging effects.

引用

页码：1610 / 1613

页数：4

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