LASER-INDUCED OXIDATION OF SILICON

被引：24

作者：

BOYD, IW ^{[1
]}

WILSON, JIB ^{[1
]}

WEST, JL ^{[1
]}

机构：

[1] HUGHES MICROELECTR LTD,GLENROTHES,FIFE,SCOTLAND

来源：

THIN SOLID FILMS | 1981年 / 83卷 / 04期

关键词：

D O I：

10.1016/0040-6090(81)90658-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L173 / L176

页数：4

共 12 条

[1] INVESTIGATION OF CHEMICAL PROPERTIES OF STAIN FILMS ON SILICON BY MEANS OF INFRARED SPECTROSCOPY [J].

BECKMANN, KH .

SURFACE SCIENCE, 1965, 3 (04) :314-&

[2] HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM [J].

CLINE, HE ;

ANTHONY, TR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3895-3900

[3]

FERRIS SD, 1979, LASER SOLID INTERACT

[4] IN-DEPTH OXYGEN CONTAMINATION PRODUCED IN SILICON BY PULSED LASER IRRADIATION [J].

GARULLI, A ;

SERVIDORI, M ;

VECCHI, I .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (10) :L199-&

[5] APPLICATIONS OF SCANNING CW LASERS AND ELECTRON-BEAMS IN SILICON TECHNOLOGY [J].

GIBBONS, JF .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :121-128

[6] CALCULATION OF SOLID-PHASE REACTION-RATES INDUCED BY A SCANNING CW LASER [J].

GOLD, RB ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1256-1258

[7] INCORPORATION OF OXYGEN INTO SILICON DURING PULSED-LASER IRRADIATION [J].

HOH, K ;

KOYAMA, H ;

UDA, K ;

MIURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) :L375-L378

[8] TEMPERATURE RISE INDUCED BY A LASER-BEAM [J].

LAX, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3919-3924

[9]

LIU YJ, UNPUBLISHED

[10] RAMAN MEASUREMENTS OF TEMPERATURE DURING CW LASER-HEATING OF SILICON [J].

LO, HW ;

COMPAAN, A .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1565-1568

← 1 2 →