Functional Monochalcogenides: Raman Evidence Linking Properties, Structure, and Metavalent Bonding

被引：24

作者：

Bellin, Christophe ^{[1
]}

Pawbake, Amit ^{[1
,2
]}

Paulatto, Lorenzo ^{[1
]}

Beneut, Keevin ^{[1
]}

Biscaras, Johan ^{[1
]}

Narayana, Chandrabhas ^{[3
]}

Polian, Alain ^{[1
]}

Late, Dattatray J. ^{[4
]}

Shukla, Abhay ^{[1
]}

机构：

[1] Sorbonne Univ, Inst Mineral Phys Mat & Cosmochim, MNHN, UMR CNRS 7590, 4 Pl Jussieu, F-75005 Paris, France

[2] MCBT, Inst Neel CNRS UGA UPR2940, 25 Rue Martyrs BP 166, F-38042 Grenoble 9, France

[3] Jawaharlal Nehru Ctr Adv Sci Res, Sch Adv Mat, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

[4] Amity Univ Maharashtra, Ctr Nanosci & Nanotechnol, Mumbai Pune Expressway, Mumbai 410206, Maharashtra, India

来源：

PHYSICAL REVIEW LETTERS | 2020年 / 125卷 / 14期

关键词：

ELECTRICAL-PROPERTIES; PRESSURE; TRANSITION; GESE; SNS; IR;

D O I：

10.1103/PhysRevLett.125.145301

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Pressure- and temperature-dependent Raman scattering in GeSe, SnSe, and GeTe for pressures beyond 50 GPa and for temperatures ranging from 78 to 800 K allow us to identify structural and electronic phase transitions, similarities between GeSe and SnSe, and differences with GeTe. Calculations help to deduce the propensity of GeTe for defect formation and the doping that results from it, which gives rise to strong Raman damping beyond anomalous anharmonicity. These properties are related to the underlying chemical bonding and consistent with a recent classification of bonding in several chalcogenide materials that puts GeTe in a separate class of "incipient" metals.

引用

页数：6

共 49 条

[1] OPTICAL FLUORESCENCE SYSTEM FOR QUANTITATIVE PRESSURE MEASUREMENT IN DIAMOND-ANVIL CELL [J].