NEGATIVE DIFFERENTIAL RESISTANCE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - INFLUENCE OF EMITTER EDGE CURRENT

被引：5
|
作者：
WALDROP, JR
CHANG, MF
机构：
[1] Rockwell International Science Center, Thousand Oaks
来源：
IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 01期
关键词：
D O I：
10.1109/55.363216
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report an electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors over a temperature range of 250 to 400 K in which the emitter edge current contribution to the negative differential output resistance (NDR) effect is determined. A quantitative analysis of the dc gain versus temperature and perimeter to area ratio indicates that emitter edge has a major influence on the NDR magnitude.
引用
收藏
页码：8 / 10
页数：3
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