NEGATIVE DIFFERENTIAL RESISTANCE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - INFLUENCE OF EMITTER EDGE CURRENT

被引：5

作者：

WALDROP, JR

CHANG, MF

机构：

[1] Rockwell International Science Center, Thousand Oaks

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 01期

关键词：

D O I：

10.1109/55.363216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors over a temperature range of 250 to 400 K in which the emitter edge current contribution to the negative differential output resistance (NDR) effect is determined. A quantitative analysis of the dc gain versus temperature and perimeter to area ratio indicates that emitter edge has a major influence on the NDR magnitude.

引用

页码：8 / 10

页数：3

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