HIGH QUANTUM EFFICIENCY AND NARROW ABSORPTION BANDWIDTH OF THE WAFER-FUSED RESONANT IN0.53GA0.47AS PHOTODETECTORS

被引：44

作者：

TAN, IH ^{[1
]}

DUDLEY, JJ ^{[1
]}

BABIC, DI ^{[1
]}

COHEN, DA ^{[1
]}

YOUNG, BD ^{[1
]}

HU, EL ^{[1
]}

BOWERS, JE ^{[1
]}

MILLER, BI ^{[1
]}

KOREN, U ^{[1
]}

YOUNG, MG ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 07期

关键词：

D O I：

10.1109/68.311462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate greater than 90% quantum efficiency in an In0.53Ga0.47As photodetector with a thin (900 angstrom) absorbing layer. This was achieved by inserting the In0.53Ga0.47As/InP epitaxial layer into a microcavity composed of a GaAs/AlAs quarter-wavelength stack (QWS) and a Si/SiO2 dielectric mirror. The 900-angstrom-thick In0.53Ga0.47As layer was wafer fused to a GaAs/AlAs mirror, having nearly 100% power reflectivity. A Si/SiO2 dielectric mirror was subsequently deposited onto the wafer-fused photodiode to form an asymmetric Fabry-Perot cavity. The external quantum efficiency and absorption bandwidth for the wafer-fused RCE photodiodes were measured to be 94 +/- 3% and 14 nm, respectively. To our knowledge, these wafer-fused RCE photodetectors have the highest external quantum efficiency and narrowest absorption bandwidth ever reported on the long-wavelength resonant-cavity-enhanced photodetectors.

引用

页码：811 / 813

页数：3

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