THE LUMINESCENCE OF POROUS SI - THE CASE FOR THE SURFACE-STATE MECHANISM

被引：320
作者：
KOCH, F
PETROVAKOCH, V
MUSCHIK, T
机构：
[1] Physik-Department E16, Technische Universität München
来源：
JOURNAL OF LUMINESCENCE | 1993年 / 57卷 / 1-6期
关键词：
D O I：
10.1016/0022-2313(93)90145-D
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The origin of the visible luminescence from porous Si is argued in terms of a quantum well picture including a spectrum of Si-related states localized on the surface. We give evidence for the existence of such states and consider their role in the light emission process. We relate the observations of luminescence in porous Si to those for amorphous Si while pointing out characteristic differences.
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页码：271 / 281
页数：11
相关论文
共 44 条
[1]  
BASMAJI P, 1993, MAT RES S C, V283, P227
[2]   SPIN-DEPENDENT EFFECTS IN POROUS SILICON [J].
BRANDT, MS ;
STUTZMANN, M .
APPLIED PHYSICS LETTERS, 1992, 61 (21) :2569-2571
[3]   THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].
BRANDT, MS ;
FUCHS, HD ;
STUTZMANN, M ;
WEBER, J ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312
[4]   IDENTIFICATION OF RADIATIVE TRANSITIONS IN HIGHLY POROUS SILICON [J].
CALCOTT, PDJ ;
NASH, KJ ;
CANHAM, LT ;
KANE, MJ ;
BRUMHEAD, D .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (07) :L91-L98
[5]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[6]  
CANHAM LT, 1993, P NATO WORKSHOP GREN
[7]  
CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11
[8]  
CULLIS AG, 1992, MATER RES SOC SYMP P, V256, P7
[9]   QUANTUM CONFINEMENT IN SI NANOCRYSTALS [J].
DELLEY, B ;
STEIGMEIER, EF .
PHYSICAL REVIEW B, 1993, 47 (03) :1397-1400
[10]  
FAUCHET PM, 1993, MATER RES SOC S P, V298
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